advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -30v small package outline r ds(on) 95m surface mount device i d -2.9a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-amb maximum thermal resistance, junction-ambient 3 100 /w data and specifications subject to change without notice 201410241ap 1 AP3601N rating - 30 + 25 -2.9 halogen-free product drain current 3 , v gs @ 10v -2.3 pulsed drain current 1 -10 thermal data parameter total power dissipation operating junction temperature range storage temperature range parameter drain-source voltage gate-source voltage drain current 3 , v gs @ 10v -55 to 150 1.25 -55 to 150 g d s d g s sot-23s ap3601 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the sot-23s package is widely preferred for commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. .
AP3601N electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-2a - - 95 m v gs =-4.5v, i d =-1a - - 150 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-2a - 6 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -30 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-2a - 4 6.5 nc q gs gate-source charge v ds =-15v - 1 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 2 - nc t d(on) turn-on delay time v ds =-15v - 6 - ns t r rise time i d =-1a - 9 - ns t d(off) turn-off delay time r g =3.3 -20- ns t f fall time v gs =-10v - 4 - ns c iss input capacitance v gs =0v - 310 500 pf c oss output capacitance v ds =-25v - 60 - pf c rss reverse transfer capacitance f=1.0mhz - 55 - pf r g gate resistance f=1.0mhz - 9 18 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-2a, v gs =0v, - 16 - ns q rr reverse recovery charge di/dt=100a/s - 7 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in2 copper pad of fr4 board, t < 10s ; 300 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 .
AP3601N 65m fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 2.01e+08 fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.6 0.8 1 1.2 1.4 1.6 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -2a v gs = -10v 0 10 20 30 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -6.0v -5.0v v g = -4.0v 0 2 4 6 8 10 12 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) v g = -4.0v -10v -7.0v -6.0v -5.0v t a = 150 o c 0 1 2 3 4 5 6 0 0.4 0.8 1.2 1.6 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 60 80 100 120 140 246810 -v gs , gate-to-source voltage (v) r ds(on) ( ) i d = -1a t a =25 o c i d = -250ua .
AP3601N 65m fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fi g 10. effective transient thermal im p edance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 02468 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -2a v ds = -15v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.2 0.1 0.05 0.02 0.01 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a t t rthja = 300 /w 0 100 200 300 400 500 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss q v g q gs q gd q g charge -4.5v t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on) .
AP3601N marking information 5 a01ss part number : a01 date code : ss ss:2004,2008,2012? ss :2003,2007,2011? s s:2002,2006,2010? ss :2001,2005,2009? .
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